 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23 - 20A TO-220/TO-247 Zener-Protected SuperMESHTMPower MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z s s s s s s VDSS 500 V 500 V RDS(on) < 0.27 < 0.27 ID 20 A 20 A Pw 190 W 190 W TYPICAL RDS(on) = 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 2 1 TO-220 TO-247 DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE July 2003 1/7 STP20NK50Z - STW20NK50Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter STP20NK50Z Value STW20NK50Z Unit V V V 20 10 64 190 1.51 A A A W W/C V V/ns C C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 20 10 64 190 1.51 500 500 30 4000 4.5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD 20A, di/dt 200A/s, VDD V(BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.66 62.5 300 TO-247 0.66 50 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 20 TBD Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/7 STP20NK50Z - STW20NK50Z ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 10 A 3 3.75 0.23 Min. 500 1 50 10 4.5 0.27 Typ. Max. Unit V A A A V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 10 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. TBD 2600 400 55 TBD Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 400V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 10 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 20 A, VGS = 10V Min. Typ. TBD TBD 95 TBD TBD Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 250 V, ID = 10 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 20 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. TBD TBD TBD TBD TBD Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/s VDD = 35V, Tj = 150C (see test circuit, Figure 5) TBD TBD TBD Test Conditions Min. Typ. Max. TBD TBD TBD Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/7 STP20NK50Z - STW20NK50Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STP20NK50Z - STW20NK50Z TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 5/7 STP20NK50Z - STW20NK50Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5 60 3.55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia 6/7 STP20NK50Z - STW20NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
Price & Availability of STP20NK50Z
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |